SSPL2015 200v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 18 i d @ t c = 100c continuous drain current, v gs @ 10v 13 i dm pulsed drain current 72 a power dissipation 150 w p d @t c = 25c linear derating factor 1.0 w/c v ds drain-source voltage 200 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=4.2mh 412 mj i as avalanche current @ l=4.2mh 14 a t j t stg operating junction and storage temperature range -55 to +175 c v dss 200v r ds (on) 0.13ohm(typ.) i d 18a marking and pin assignment schematic diagram ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product these n-channel enhancement mode power field effect transistors are produced using our proprietary mosfet technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. to - 220
SSPL2015 200v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 1.0 c/w junction-to-ambient (t 10s) 62 c/w r ja junction-to-ambient (pcb mounted, steady-state) 40 c/w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 250a 0.13 0.15 v gs =10v,i d =11a r ds(on) static drain-to-source on-resistance 0.27 t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.26 v t j = 125c 1 v ds =200v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 22.0 q gs gate-to-source charge 6.6 q gd gate-to-drain("miller") charge 7.2 nc i d = 18a, v ds =160v, v gs = 10v t d(on) turn-on delay time 11.0 t r rise time 25.5 t d(off) turn-off delay time 21.9 t f fall time 5.2 ns v gs =10v, v dd =100v, r l =9.2, r gen =2.55 i d =11a c iss input capacitance 1038 c oss output capacitance 232 c rss reverse transfer capacitance 51 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 18 a i sm pulsed source current (body diode) 72 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.89 1.3 v i s =11a, v gs =0v, t j = 25c t rr reverse recovery time 136 ns q rr reverse recovery charge 900 nc t j = 25c, i f =11a, di/dt = 100a/s
SSPL2015 200v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
SSPL2015 200v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSPL2015 200v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSPL2015 200v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.240 2.340 2.440 0.088 0.092 0.096 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 b2 0.750 0.800 0.850 0.030 0.031 0.033 c 0.480 0.500 0.520 0.019 0.020 0.021 d 15.100 15.400 15.700 0.594 0.606 0.618 d1 8.800 8.900 9.000 0.346 0.350 0.354 d2 2.730 2.800 2.870 0.107 0.110 0.113 e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 8.700 - - 0.343 - p 3.570 3.600 3.630 0.141 0.142 0.143 p1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 l 13.150 13.360 13.570 0.518 0.526 0.534 l1 l2 2.900 3.000 3.100 0.114 0.118 0.122 l3 1.650 1.750 1.850 0.065 0.069 0.073 l4 0.900 1.000 1.100 0.035 0.039 0.043 q1 5 0 7 0 9 0 5 0 7 0 9 0 q2 5 0 7 0 9 0 5 0 7 0 9 0 q3 5 0 7 0 9 0 5 0 7 0 9 0 q4 1 0 3 0 5 0 1 0 3 0 5 0 5.08bsc 0.2bsc symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 7.35ref 0.29ref to-220 package outline dimension_gn
SSPL2015 200v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: SSPL2015 package (available) to-220 operating temperature range c : -55 to175 oc devices per unit package type units/tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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